Vishay Single 1 Type N-Channel Power MOSFET, 16 A, 500 V TO-220AB IRFB17N50LPBF
- N° de stock RS:
- 180-8623
- Référence fabricant:
- IRFB17N50LPBF
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
12,48 €
(TVA exclue)
15,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- Plus 10 unité(s) expédiée(s) à partir du 16 mars 2026
- 536 unité(s) finale(s) expédiée(s) à partir du 23 mars 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,24 € | 12,48 € |
| 20 - 48 | 5,605 € | 11,21 € |
| 50 - 98 | 5,125 € | 10,25 € |
| 100 - 198 | 4,675 € | 9,35 € |
| 200 + | 4,375 € | 8,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-8623
- Référence fabricant:
- IRFB17N50LPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 0.32Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 220W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 0.32Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 220W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay IRFB17N50L is a N-channel power MOSFET having drain to source(Vds) voltage of 500V.The gate to source voltage(VGS) is 30V. It is having TO-220AB package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current 16A.
Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
Liens connexes
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