Références fabricant

Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

N° de stock RS:: 180-8062
Référence fabricant:: SI4425DDY-T1-GE3
Fabricant:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 19.7 A, 30 V Enhancement, 8-Pin SO-8 SI4425DDY-T1-GE3

Sous-total (1 paquet de 20 unités)*

5,28 €

(TVA exclue)

6,38 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

2 780 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le paquet*
20 +	0,264 €	5,28 €

*Prix donné à titre indicatif

N° de stock RS:: 180-8062
Référence fabricant:: SI4425DDY-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.6W
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Width	6.2 mm
	Height	1.75mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.6W
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Width 6.2 mm
	Height 1.75mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 9.8mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 5.7W and continuous drain current of 19.7A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Desktop PCs

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested