Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB
- N° de stock RS:
- 200-6821
- Référence fabricant:
- SIHP690N60E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
54,925 €
(TVA exclue)
66,45 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 2,197 € | 54,93 € |
| 50 - 100 | 2,066 € | 51,65 € |
| 125 - 225 | 1,867 € | 46,68 € |
| 250 - 600 | 1,758 € | 43,95 € |
| 625 + | 1,648 € | 41,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 200-6821
- Référence fabricant:
- SIHP690N60E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in industrial electronics. It is supplied in a through-hole TO-220AB package suitable for heatsinking, and is intended for engineers working on control, conversion and protection circuits where robust voltage endurance and straightforward mounting are required.
Features and Benefits:
• 650V Vds for high-voltage switching capability • 6.4A continuous drain current enabling moderate load handling • 700mΩ Rds(on) for predictable conduction losses • 12nC typical gate charge for manageable switching energy • 62.5W power dissipation to support thermal design • 150°C maximum junction temperature for elevated-temperature operation
Applications
• Suitable for high-voltage switch-mode power supplies • Ideal for motor drive gate-stage circuits • Used for industrial inverter protection switching • Can be used for power-factor correction stages • Suitable for high-voltage relay and contactor driver circuits
What is the recommended gate voltage range for driving this device?
The device accepts gate voltages up to 30 V, so gate drivers should be chosen to remain within that limit and provide adequate drive for the specified gate charge.
How should thermal management be approached when mounting?
Use a compatible heatsink on the TO-220AB tab and ensure sufficient airflow
account for the 62.5W dissipation rating when calculating temperature rise.
What ambient conditions are acceptable for operation?
The component is specified to operate down to -55°C, while the maximum junction rating is 150°C, so designs must manage junction-to-ambient thermal resistance to stay within those bounds.
Are there considerations for switching losses at high voltage?
With a 12 nC gate charge and 700 mΩ Rds(on), designers should balance gate-drive speed against switching loss, particularly in applications that switch frequently at high Vds.
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