Vishay E N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3
- N° de stock RS:
- 225-9919
- Référence fabricant:
- SIHP5N80AE-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
8,39 €
(TVA exclue)
10,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 1 050 unité(s) expédiée(s) à partir du 18 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,839 € | 8,39 € |
| 100 - 240 | 0,797 € | 7,97 € |
| 250 - 490 | 0,672 € | 6,72 € |
| 500 - 990 | 0,629 € | 6,29 € |
| 1000 + | 0,587 € | 5,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-9919
- Référence fabricant:
- SIHP5N80AE-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220AB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.52mm | |
| Height | 15.85mm | |
| Standards/Approvals | RoHS | |
| Width | 4.65mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220AB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.52mm | ||
Height 15.85mm | ||
Standards/Approvals RoHS | ||
Width 4.65mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHP5N80AE-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion duties in industrial environments. It operates across a wide ambient temperature range and is supplied in a TO-220AB package for conventional mounting. The device supports elevated drain-source voltage requirements while providing moderate continuous current capability and is intended for surface-mounting applications in equipment that requires RoHS-compliant components.
Features and Benefits:
• 800V drainage capability enables high-voltage switching
• 4.4A continuous current suits moderate power loads
• 1.35Ω Rds(on) minimises conduction losses under load
• 62.5W maximum dissipation supports elevated power handling
• 16.5nC typical gate charge enables faster gate transitions
• ±30V gate tolerance allows flexible drive voltages
• 4.4A continuous current suits moderate power loads
• 1.35Ω Rds(on) minimises conduction losses under load
• 62.5W maximum dissipation supports elevated power handling
• 16.5nC typical gate charge enables faster gate transitions
• ±30V gate tolerance allows flexible drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial switch-mode power
• Used with motor drives requiring robust voltage margin
• Can be used for snubber and clamp circuits in HV systems
• Appropriate for laboratory test rigs handling high voltages
• Ideal for industrial switch-mode power
• Used with motor drives requiring robust voltage margin
• Can be used for snubber and clamp circuits in HV systems
• Appropriate for laboratory test rigs handling high voltages
What thermal extremes can it withstand during operation?
It is rated to operate from -55°C up to 150°C, permitting use in both cold-start and high-temperature industrial conditions.
What package and mounting method does it use for PCB implementation?
It is supplied in a TO-220AB package and intended for surface-mount installation, facilitating through-hole-style heat-sinking on assemblies.
How many connection pins are provided and what is the polarity type?
The device has three pins and employs an N-channel type, with typical MOSFET pin functions for gate, drain and source.
Are there limits on gate drive voltage to avoid damage?
Gate-source voltage must not exceed 30V to prevent gate overstress during driving.
Liens connexes
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