Références fabricant

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB

N° de stock RS:: 180-7350
Référence fabricant:: SIHP25N50E-GE3
Fabricant:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

91,50 €

(TVA exclue)

110,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 250 unité(s) expédiée(s) à partir du 19 janvier 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 - 50	1,83 €	91,50 €
100 - 200	1,72 €	86,00 €
250 - 450	1,555 €	77,75 €
500 - 1200	1,464 €	73,20 €
1250 +	1,372 €	68,60 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7350
Référence fabricant:: SIHP25N50E-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Series	E
	Package Type	TO-220AB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	86nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Height	6.71mm
	Width	10.52 mm
	Length	14.4mm
	Standards/Approvals	RoHS
	Number of Elements per Chip	1
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Series E
	Package Type TO-220AB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 86nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Height 6.71mm
	Width 10.52 mm
	Length 14.4mm
	Standards/Approvals RoHS
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM): Ron x Qg

• Low gate charge (Qg)

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

Applications

• Hard switched topologies

• PC silver box/ATX power supplies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Two-stage LED lighting

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested