Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB

N° de stock RS:: 228-2874
Référence fabricant:: SiHP080N60E-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB

Sous-total (1 tube de 50 unités)*

175,20 €

(TVA exclue)

212,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 650 unité(s) expédiée(s) à partir du 25 juin 2026

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Unité	Prix par unité	le tube*
50 +	3,504 €	175,20 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2874
Référence fabricant:: SiHP080N60E-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	227W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 227W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHP080N60E-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 35A Maximum Continuous Drain Current - SiHP080N60E-GE3

This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial and electronic systems. It operates as an enhancement-mode transistor in a through-hole TO-220 package, allowing robust mounting and heat-sinking for demanding applications. The device is suited to circuits requiring high drain-source voltage handling and significant continuous current capability.

Features and Benefits:

• 650V rating enables handling of high-voltage power rails • 35A continuous drain current supports substantial load currents • 80mΩ Rds(on) minimises conduction losses during switching • 42nC typical gate charge reduces driver energy requirements • 227W power dissipation permits sustained thermal loading • 150°C maximum junction temperature allows high-temperature operation

Applications

• Suitable for high-voltage DC-DC converters in industrial power supplies • Ideal for motor-drive front-ends requiring robust switching elements • Used for inverter stages in medium-power renewable systems • Can be used for power-factor-correction stages in commercial equipment • Used with discrete switching designs needing through-hole mounting

What gate-drive considerations should I allow for?

Expect a typical gate charge of 42nC at the specified gate drive, so select a driver capable of sourcing and sinking the required Peak current to meet switching-speed targets.

How should thermal management be applied in a design?

Use a suitable heatsink attached to the TO-220 tab and account for the 227W power dissipation rating under defined thermal conditions to maintain junction temperature below its 150°C limit.

What polarity and mounting constraints exist for PCB integration?

The device is an N-channel enhancement device with three pins in a through-hole TO-220 arrangement, enabling secure mechanical attachment and straightforward thermal coupling to a chassis or heatsink.

Are there limits for gate voltage during operation?

The maximum permissible gate-source voltage is 30V, so gate-drive circuits must be designed to remain within this threshold to avoid device stress.