Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

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Sous-total (1 bobine de 3000 unités)*

3 258,00 €

(TVA exclue)

3 942,00 €

(TVA incluse)

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Dernier stock RS
  • 3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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la bobine*
3000 +1,086 €3 258,00 €

*Prix donné à titre indicatif

N° de stock RS:
180-7325
Référence fabricant:
SI7997DP-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

-60A

Maximum Drain Source Voltage Vds

-30V

Series

SI7997DP

Package Type

PowerPack

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

29W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Width

5.26 mm

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications


• Adaptor switches

• Battery management

• Load switches

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