Vishay Dual SI7956DP N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

N° de stock RS:: 180-7886
Référence fabricant:: SI7956DP-T1-GE3
Fabricant:: Vishay

Vishay Dual SI7956DP N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Sous-total (1 paquet de 5 unités)*

13,73 €

(TVA exclue)

16,62 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	le paquet*
5 +	2,746 €	13,73 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7886
Référence fabricant:: SI7956DP-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.5W
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.25mm
	Width	5.26mm
	Height	1.12mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.5W
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.25mm
	Width 5.26mm
	Height 1.12mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay SI7956DP Series MOSFET, 150V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - SI7956DP-T1-GE3

This MOSFET is a dual N-channel transistor in a surface-mount PowerPack package designed for high-voltage switching and control tasks. It operates as an enhancement-mode device intended for use where compact, board-mounted power switching is required. The component supports moderate continuous currents and is suitable for applications that demand resilience across a wide ambient temperature range.

Features and Benefits:

• 150V drain-source rating enables high-voltage switching capability
• 0.1Ω maximum Rds(on) reduces conduction losses during operation
• 4.1A continuous drain current supports sustained load currents
• 17nC typical gate charge yields predictable switching energy
• 3.5W maximum power dissipation manages thermal load in circuits
• -50°C to 150°C operating range sustains performance in extremes

Applications

• Suitable for motor driver half-bridge stages on compact boards
• Ideal for high-voltage power switching in industrial control
• Used for DC-DC converter phases requiring dual transistors
• Can be used for low-side switching in battery management systems
• Used with gate drivers where moderate gate charge is acceptable

What pin count and package type does it use for PCB layout?

It is supplied in an 8-pin PowerPack surface-mount package suitable for dense board layouts and thermal conduction through the package body.

How does the device behave thermally under load?

The device has a 3.5W maximum power dissipation rating and can operate up to 150°C, so thermal management such as copper area or heatsinking should be sized to keep junction temperatures within limits.

What gate voltage limitations must be observed during drive design?

The maximum gate-to-source voltage is 20V, so gate-drive circuits should stay within this threshold to avoid device damage.

Are there any constraints on transistor configuration for circuit design?

The component contains two N-channel transistors in a dual configuration, allowing complementary switching arrangements or parallel operation depending on the schematic.