Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

N° de stock RS:: 180-7324
Référence fabricant:: SI7956DP-T1-GE3
Fabricant:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

Sous-total (1 bobine de 3000 unités)*

4 500,00 €

(TVA exclue)

5 460,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 02 novembre 2026

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Unité	Prix par unité	la bobine*
3000 +	1,50 €	4 500,00 €

*Prix donné à titre indicatif

N° de stock RS:: 180-7324
Référence fabricant:: SI7956DP-T1-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPack
	Series	SI7956DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Power Dissipation Pd	3.5W
	Forward Voltage Vf	1.2V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.25mm
	Height	1.12mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPack
	Series SI7956DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Power Dissipation Pd 3.5W
	Forward Voltage Vf 1.2V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.25mm
	Height 1.12mm
	Automotive Standard No

Datasheet

Pays d'origine :: CN

Vishay SI7956DP Series MOSFET, 150V Drain Source Voltage, 4.1A Continuous Drain Current - SI7956DP-T1-GE3

This dual N-channel MOSFET is a surface-mount switching device designed for high-voltage power applications in industrial and electronic systems. It delivers controlled conduction for load switching and power conversion tasks, operating across a wide ambient range and intended for board-level integration where compact, dual-transistor solutions are required.

Features and Benefits:

• 150V drain tolerance enables high-voltage switching capabilities • 4.1A continuous drain current supports moderate load currents • 0.1Ω Rds(on) minimises conduction losses for improved efficiency • 17nC typical gate charge allows predictable switching behaviour • 3.5W power dissipation manages thermal load in Compact assemblies

Applications

• Suitable for DC-DC converter stages in automation equipment • Ideal for motor driver half-bridge circuits in control panels • Used for switched-mode power supplies in industrial electronics • Can be used for power distribution switches on Compact PCBs

What are the allowable gate and drain voltages for safe operation?

The gate may be driven up to 20V and the device withstands drain-source voltages up to 150V.

What thermal extremes can the device tolerate during operation?

It is rated for continuous use from -50°C up to a maximum operating temperature of 150°C.

How many pins and what package type should be expected for PCB layout?

The component is supplied as an 8-pin PowerPack surface-mount device suited to standard land patterns.

How does the dual configuration affect circuit implementation?

Two transistors are provided in a single package, enabling Compact paired-switch arrangements and simplified board routing.