Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- N° de stock RS:
- 736-345
- Référence fabricant:
- SI9945CDY-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,61 €
(TVA exclue)
0,74 €
(TVA incluse)
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Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 0,61 € |
| 25 - 99 | 0,41 € |
| 100 + | 0,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-345
- Référence fabricant:
- SI9945CDY-T1-GE3
- Fabricant:
- Vishay
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SI9945CDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SI9945CDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 3.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.
TrenchFET technology delivers reduced switching losses
Optimised Qg, Qgd, and Qgs ratios enhance performance
100% tested for Rg and UIS ensures reliability
Liens connexes
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