Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack
- N° de stock RS:
- 180-7312
- Référence fabricant:
- SI7216DN-T1-E3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 896,00 €
(TVA exclue)
2 295,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,632 € | 1 896,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7312
- Référence fabricant:
- SI7216DN-T1-E3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SI7216DN | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 20.8W | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 3.4 mm | |
| Height | 1.12mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SI7216DN | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 20.8W | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 3.4 mm | ||
Height 1.12mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
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