Vishay TrenchFET Type P-Channel MOSFET, 29 A, 30 V Enhancement, 8-Pin SO-8

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N° de stock RS:
180-7291
Référence fabricant:
SI4459ADY-T1-GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

129nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Height

1.75mm

Standards/Approvals

No

Width

6.2 mm

Length

5mm

Automotive Standard

No

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 29A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Adaptor switch

• Notebook

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS teste

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