Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- N° de stock RS:
- 214-4476
- Numéro d'article Distrelec:
- 304-39-427
- Référence fabricant:
- SN7002NH6327XTSA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 200 unités)*
22,60 €
(TVA exclue)
27,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 200 - 200 | 0,113 € | 22,60 € |
| 400 - 800 | 0,107 € | 21,40 € |
| 1000 - 1800 | 0,103 € | 20,60 € |
| 2000 - 4800 | 0,098 € | 19,60 € |
| 5000 + | 0,091 € | 18,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-4476
- Numéro d'article Distrelec:
- 304-39-427
- Référence fabricant:
- SN7002NH6327XTSA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Gate Source Voltage Vgs | 60V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Gate Source Voltage Vgs 60V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 5Ω Drain Source Resistance - SN7002NH6327XTSA2
This MOSFET is a small-signal N-channel transistor designed for switching and control tasks in surface-mount assemblies. It operates as an enhancement-mode device and is built to withstand a wide ambient range, making it suitable for electronics that require compact, thermally resilient switching components.
Features and Benefits:
• 60V drain voltage for high-voltage switching capability
• 5Ω Rds(on) enabling controlled low-current conduction
• 200mA continuous drain current for small-signal loads
• 1.2V forward voltage supporting predictable diode drop
• 1.5nC typical gate charge for faster gate transitions
• 0.36W power dissipation for moderate thermal loading
• 5Ω Rds(on) enabling controlled low-current conduction
• 200mA continuous drain current for small-signal loads
• 1.2V forward voltage supporting predictable diode drop
• 1.5nC typical gate charge for faster gate transitions
• 0.36W power dissipation for moderate thermal loading
Applications
• Suitable for battery-management signal switching circuits
• Ideal for low-current power routing in consumer electronics
• Used with small motor-driver interface circuits
• Can be used for level-shifting and signal multiplexing
• Suitable for sensor-conditioning and signal isolation tasks
• Ideal for low-current power routing in consumer electronics
• Used with small motor-driver interface circuits
• Can be used for level-shifting and signal multiplexing
• Suitable for sensor-conditioning and signal isolation tasks
What package and mounting type does it use for PCB assembly?
It is supplied in a SOT-23 package and intended for surface-mount placement.
How does it perform across temperature extremes in harsh environments?
It operates between -55°C and 150°C, providing stability for varied thermal conditions.
What gate and drain voltage limits must be observed during design?
The gate-to-source and drain-to-source voltages are both limited to 60V, which defines maximum applied voltages.
Are there industry material or process standards associated with the component?
It complies with IEC 61249-2-21 and meets AEC Q101 for automotive-qualification equivalence.
Liens connexes
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2