Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- N° de stock RS:
- 753-2841
- Numéro d'article Distrelec:
- 304-45-304
- Référence fabricant:
- BSS159NH6327XTSA2
- Fabricant:
- Infineon
Sous-total (1 paquet de 25 unités)*
9,325 €
(TVA exclue)
11,275 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 29 janvier 2027
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,373 € | 9,33 € |
| 125 - 475 | 0,192 € | 4,80 € |
| 500 - 1225 | 0,188 € | 4,70 € |
| 1250 + | 0,183 € | 4,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 753-2841
- Numéro d'article Distrelec:
- 304-45-304
- Référence fabricant:
- BSS159NH6327XTSA2
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Width 1.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 230mA Maximum Continuous Drain Current - BSS159NH6327XTSA2
Features and Benefits:
• 8 Ω maximum Rds provides predictable conduction losses
• 230 mA continuous drain current supports small-load drivers
• 360 mW power dissipation limits thermal stress under load
• 1.4 nC typical gate charge allows faster gate transitions
• 20V maximum gate voltage protects gate from overdrive
Applications
• Ideal for on-board power-management modules
• Used with sensor interfaces requiring controlled switching
• Can be used for small relay or solenoid drivers
• Suitable for surface-mount prototyping and compact designs
What thermal range can it withstand in harsh environments?
How does the package affect board assembly and layout?
What channel behaviour should designers expect at idle?
Are there limits on mechanical mounting or pin count considerations?
Liens connexes
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS® Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23
- Infineon BSS138I Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS138IXTSA1
