Vishay IRFB11N50A Type N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF

N° de stock RS:: 178-0823
Référence fabricant:: IRFB11N50APBF
Fabricant:: Vishay

Vishay IRFB11N50A Type N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF

Sous-total (1 tube de 50 unités)*

76,80 €

(TVA exclue)

92,95 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 +	1,536 €	76,80 €

*Prix donné à titre indicatif

N° de stock RS:: 178-0823
Référence fabricant:: IRFB11N50APBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRFB11N50A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	520mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRFB11N50A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 520mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Datasheet

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Vishay IRFB11N50A Series Power MOSFET, 500V Drain Source Voltage, 11A Continuous Drain Current - IRFB11N50APBF

This power MOSFET is a high-voltage N-channel switching device designed for through-hole board mounting in industrial and power electronics contexts. It operates across a wide temperature span, supports substantial switching currents and voltages, and is supplied in a TO-220AB package for straightforward heatsinking and chassis attachment.

Features and Benefits:

• 500V drain rating enables high-voltage switching applications
• 11A continuous drain current supports heavy load handling
• 170W maximum dissipation allows significant power switching
• 520mΩ Rds(on) gives predictable conduction losses
• 52nC typical gate charge permits controlled gate-drive design
• 30V gate limit protects against excessive drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with discrete MOSFET assemblies in power inverters
• Can be used for switch-mode power regulators and controllers
• Appropriate for laboratory power test rigs and prototypes

What thermal range can I expect for field and storage conditions?

It functions between -55°C and 150°C, allowing use in harsh ambient environments.

How is the device mounted and cooled in a system?

The TO-220AB through-hole format permits bolting to an external heatsink or chassis for enhanced thermal transfer.

What gate-drive considerations are important to prevent damage?

Keep gate voltage within a 30V limit and design the driver to charge approximately 52nC to switch reliably.

How does the forward voltage affect conduction in circuits?

The forward voltage of 1.5V will influence total system losses during conduction and should be included in thermal and efficiency calculations.