Vishay IRFB11N50A Type N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB

N° de stock RS:: 178-0823
Référence fabricant:: IRFB11N50APBF
Fabricant:: Vishay

Vishay IRFB11N50A Type N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB

Sous-total (1 tube de 50 unités)*

76,80 €

(TVA exclue)

92,95 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 +	1,536 €	76,80 €

*Prix donné à titre indicatif

N° de stock RS:: 178-0823
Référence fabricant:: IRFB11N50APBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRFB11N50A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	520mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Height	9.01mm
	Length	10.41mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRFB11N50A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 520mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Height 9.01mm
	Length 10.41mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

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Vishay IRFB11N50A Series Power MOSFET, 500V Maximum Drain Source Voltage, 11A Maximum Continuous Drain Current - IRFB11N50APBF

This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial systems. It operates as an enhancement-mode transistor for managing high-voltage loads and is mounted through the PCB using a TO-220AB through-hole package for straightforward heatsinking and assembly.

Features and Benefits:

• 500V maximum drain-source voltage enables high-voltage switching
• 11A continuous drain current supports moderate load currents
• 520mΩ Rds(on) reduces conduction losses in low-duty circuits
• 170W power dissipation allows substantial thermal handling
• 52nC typical gate charge facilitates predictable switching dynamics
• 150°C maximum operating temperature sustains elevated thermal environments

Applications

• Suitable for SMPS primary-side switching in power supplies
• Ideal for inverter-stage switching in motor drives
• Used for high-voltage DC-DC conversion modules
• Can be used for industrial relay and contactor drive circuits

What gate drive limits should I observe for safe operation?

Drive the gate within ±30V to avoid exceeding the maximum gate-source rating and ensure reliable switching.

How does thermal management affect performance under continuous load?

Attach a heatsink to the TO-220AB tab to keep junction temperature below maximum limits and maintain the stated power dissipation capability.

What ambient range is supported for deployment in industrial sites?

The device tolerates operating temperatures down to -55°C and up to 150°C for use across wide environmental conditions.

How does the package style influence mounting and serviceability?

The through-hole TO-220AB format permits secure mechanical mounting and straightforward replacement during maintenance.