Vishay IRFR420 N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF

Sous-total (1 bobine de 2000 unités)*

896,00 €

(TVA exclue)

1 084,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 10 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
2000 +0,448 €896,00 €

*Prix donné à titre indicatif

N° de stock RS:
177-7553
Référence fabricant:
IRFR420TRPBF
Fabricant:
Vishay
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

IRFR420

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

42W

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22mm

Length

6.73mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Height

2.39mm

Automotive Standard

No

Vishay IRFR420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFR420TRPBF


This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic equipment. It operates across a broad temperature range for demanding environments and is supplied in a compact surface-mount package suited to board-level assemblies.

Features and Benefits:


• 500V maximum drain-source voltage for high-voltage switching capability
• 3Ω Rds(on) enabling predictable conduction losses
• 2.4A continuous drain current for steady-state load handling
• 19nC gate charge supporting efficient switching transitions
• 42W maximum power dissipation for thermal performance budgeting
• 20V gate-source rating to accommodate strong gate-drive margins

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-control front ends
• Used with isolated DC-DC converters in power systems
• Can be used for lamp and heater switching circuits
• Appropriate for rugged electronics operating at extreme temperatures

What mounting method should be used for reliable operation?


The package is a TO-252 surface-mount type, so standard SMT reflow processes and compatible land patterns are appropriate for PCB assembly.

What thermal limits must designers consider during layout?


The device dissipates up to 42W

copper area, thermal vias and adequate heat-sinking on the PCB are required to manage junction temperature within limits.

How does gate-drive choice affect switching performance?


A drive capable of approaching the 20V gate-source limit provides faster turn-on while the 19nC gate charge figure helps estimate required drive current and switching losses.

What environmental extremes can it endure?


It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient and junction temperature swings.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.