Vishay IRFR420 N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin TO-252 IRFR420TRPBF
- N° de stock RS:
- 177-7553
- Référence fabricant:
- IRFR420TRPBF
- Fabricant:
- Vishay
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 177-7553
- Référence fabricant:
- IRFR420TRPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFR420 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFR420 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Automotive Standard No | ||
Vishay IRFR420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFR420TRPBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial and electronic equipment. It operates across a broad temperature range for demanding environments and is supplied in a compact surface-mount package suited to board-level assemblies.
Features and Benefits:
• 500V maximum drain-source voltage for high-voltage switching capability
• 3Ω Rds(on) enabling predictable conduction losses
• 2.4A continuous drain current for steady-state load handling
• 19nC gate charge supporting efficient switching transitions
• 42W maximum power dissipation for thermal performance budgeting
• 20V gate-source rating to accommodate strong gate-drive margins
• 3Ω Rds(on) enabling predictable conduction losses
• 2.4A continuous drain current for steady-state load handling
• 19nC gate charge supporting efficient switching transitions
• 42W maximum power dissipation for thermal performance budgeting
• 20V gate-source rating to accommodate strong gate-drive margins
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-control front ends
• Used with isolated DC-DC converters in power systems
• Can be used for lamp and heater switching circuits
• Appropriate for rugged electronics operating at extreme temperatures
• Ideal for industrial motor-control front ends
• Used with isolated DC-DC converters in power systems
• Can be used for lamp and heater switching circuits
• Appropriate for rugged electronics operating at extreme temperatures
What mounting method should be used for reliable operation?
The package is a TO-252 surface-mount type, so standard SMT reflow processes and compatible land patterns are appropriate for PCB assembly.
What thermal limits must designers consider during layout?
The device dissipates up to 42W
copper area, thermal vias and adequate heat-sinking on the PCB are required to manage junction temperature within limits.
How does gate-drive choice affect switching performance?
A drive capable of approaching the 20V gate-source limit provides faster turn-on while the 19nC gate charge figure helps estimate required drive current and switching losses.
What environmental extremes can it endure?
It is specified to operate from -55°C to 150°C, allowing use in applications with wide ambient and junction temperature swings.
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