Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK IRFU420PBF
- N° de stock RS:
- 152-6352
- Référence fabricant:
- IRFU420PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
8,36 €
(TVA exclue)
10,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 2 240 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,836 € | 8,36 € |
| 100 - 240 | 0,812 € | 8,12 € |
| 250 - 490 | 0,792 € | 7,92 € |
| 500 - 990 | 0,773 € | 7,73 € |
| 1000 + | 0,754 € | 7,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-6352
- Référence fabricant:
- IRFU420PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFU420 | |
| Package Type | IPAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFU420 | ||
Package Type IPAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Width 6.22mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - IRFU420PBF
This power MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control tasks in industrial systems. It operates as an N-channel enhancement-mode device suited to applications requiring elevated drain-source voltage handling and moderate continuous current, with an IPAK 3-pin package intended for Compact board-level integration.
Features and Benefits:
• 500V drain-source withstand for high-voltage switching capability • 3 Ω RDS(on) for predictable on-state conduction losses • 2.4 A continuous drain current for sustained load operation • 19 nC typical gate charge to aid switching energy estimation • 42W maximum power dissipation for thermal design margin • -55 °C to 150 °C operating range for wide thermal environments
Applications
• Suitable for industrial motor-drive gate switching stages • Ideal for high-voltage switch-mode power supplies • Used for line-voltage protection and snubber circuits • Can be used in automation control relays and drivers
What gate voltage limits should be observed during design?
Keep gate excursions within ±20V relative to source to prevent gate-oxide overstress and ensure long-term switching reliability.
How should thermal constraints be managed on the PCB?
Use adequate copper area and thermal vias to dissipate up to 42 W, and evaluate junction-to-ambient resistance for your cooling strategy.
What switching performance considerations arise from the gate charge?
Budget driver current and slew rates around the 19 nC gate charge Value to control switching losses and electromagnetic emissions during transitions.
Are there specific mounting recommendations for reliable operation?
As a surface-mount IPAK device, ensure secure solder joints and an appropriate footprint for heat spreading to maintain temperature within the -55 °C to 150 °C operational band.
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