Vishay D Series N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3
- N° de stock RS:
- 787-9143
- Référence fabricant:
- SIHD3N50D-GE3
- Fabricant:
- Vishay
Indisponible
RS n'aura plus ce produit en stock.
Produit de remplacement
Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:
L'unité (en paquet de 5)
0,81 €
(TVA exclue)
0,98 €
(TVA incluse)
- N° de stock RS:
- 787-9143
- Référence fabricant:
- SIHD3N50D-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | D Series | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 500 V | ||
Series D Series | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 6 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Liens connexes
- Vishay D Series N-Channel MOSFET 500 V, 3-Pin DPAK SIHD3N50D-GE3
- Vishay N-Channel MOSFET 600 V, 3-Pin DPAK SIHD186N60EF-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin DPAK SIHD2N80AE-GE3
- Vishay N-Channel MOSFET 60 V, 3-Pin DPAK SUD23N06-31-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin DPAK SIHD11N80AE-GE3
- Vishay N-Channel MOSFET 500 V, 3-Pin DPAK IRFR420TRPBF
- Vishay N-Channel MOSFET 500 V, 3-Pin D2PAK SIHF840STRL-GE3
- Vishay P-Channel MOSFET 40 V, 3-Pin DPAK SUD50P04-08-GE3

