STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- N° de stock RS:
- 151-418
- Référence fabricant:
- STD3NK60ZT4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 20 unités)*
21,36 €
(TVA exclue)
25,84 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 420 unité(s) expédiée(s) à partir du 13 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 20 - 180 | 1,068 € | 21,36 € |
| 200 - 480 | 0,921 € | 18,42 € |
| 500 + | 0,722 € | 14,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-418
- Référence fabricant:
- STD3NK60ZT4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Liens connexes
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK STD3NK60Z-1
- STMicroelectronics MDmesh 1 A 3-Pin TO-252
- STMicroelectronics MDmesh 1 A 3-Pin TO-252 STD1NK60T4
- STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263