Vishay Single SQ Rugged Type N, Type N-Channel MOSFET, 50 A, 50 V Enhancement, 3-Pin TO-252 SQD50N05-11L_GE3
- N° de stock RS:
- 170-8302
- Référence fabricant:
- SQD50N05-11L_GE3
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 170-8302
- Référence fabricant:
- SQD50N05-11L_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | SQ Rugged | |
| Package Type | TO-252 | |
| Mount Type | PCB, Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101, AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series SQ Rugged | ||
Package Type TO-252 | ||
Mount Type PCB, Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101, AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Liens connexes
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- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252