Vishay SQ Rugged N-Channel MOSFET, 50 A, 50 V, 3-Pin DPAK SQD50N05-11L_GE3

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N° de stock RS:
787-9493
Référence fabricant:
SQD50N05-11L_GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

50 V

Series

SQ Rugged

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Typical Gate Charge @ Vgs

34.6 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

2.38mm

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor

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