Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44ZPBF

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

22,35 €

(TVA exclue)

27,05 €

(TVA incluse)

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Unité
Prix par unité
le tube*
50 - 500,447 €22,35 €
100 - 2000,416 €20,80 €
250 - 4500,405 €20,25 €
500 - 12000,395 €19,75 €
1250 +0,385 €19,25 €

*Prix donné à titre indicatif

N° de stock RS:
145-9601
Référence fabricant:
IRFZ44ZPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

80W

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

175°C

Height

8.77mm

Width

4.4 mm

Length

10mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
MX

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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