Vishay SQJ N-Channel Single MOSFETs, 268 A, 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3
- N° de stock RS:
- 829-352
- Référence fabricant:
- SQJ160ELP-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,59 €
(TVA exclue)
3,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 mai 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,59 € |
| 10 - 99 | 1,66 € |
| 100 - 499 | 1,13 € |
| 500 - 999 | 0,96 € |
| 1000 + | 0,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-352
- Référence fabricant:
- SQJ160ELP-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 268A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | P | |
| Series | SQJ | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00182Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 245W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.9mm | |
| Length | 6.15mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 268A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type P | ||
Series SQJ | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00182Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 245W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 4.9mm | ||
Length 6.15mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
The Vishay high-performance N-Channel MOSFET designed for automotive applications, ensuring reliability and efficiency in demanding environments.
TrenchFET technology enhances performance and reduces energy loss
AEC-Q101 qualified, ensuring compliance for automotive use
Extensive R and UIS testing guarantees robust functionality
Designed for high current capabilities with a maximum continuous drain current of 268 A
Liens connexes
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- Vishay SQJ P-Channel Single MOSFETs -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- Vishay SQJ Type N-Channel MOSFET 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SQ P-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SQ3457CEV-T1_GE3
- Vishay SQJ Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8L SQJ182EP-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQJQ580E-T1_GE3