Vishay Single SQJ 1 Type P-Channel MOSFET, 36 A, 60 V, 8-Pin PowerPAK SO-8L
- N° de stock RS:
- 180-7403
- Référence fabricant:
- SQJ457EP-T1_GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 371,00 €
(TVA exclue)
1 659,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,457 € | 1 371,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 180-7403
- Référence fabricant:
- SQJ457EP-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ | |
| Package Type | PowerPAK SO-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Width | 5.13 mm | |
| Height | 1.14mm | |
| Length | 6.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ | ||
Package Type PowerPAK SO-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Width 5.13 mm | ||
Height 1.14mm | ||
Length 6.15mm | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• DC/DC primary switches
• Load switches
• Power management
Certifications
• AEC-Q101 qualified
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Liens connexes
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