Vishay SQJ P-Channel Single MOSFETs, -36 A, -60 V Enhancement Mode, 8-Pin P SQJ457EP-T1_NE3
- N° de stock RS:
- 829-353
- Référence fabricant:
- SQJ457EP-T1_NE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,76 €
(TVA exclue)
2,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,76 € |
| 10 - 99 | 1,08 € |
| 100 - 499 | 0,71 € |
| 500 - 999 | 0,56 € |
| 1000 + | 0,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-353
- Référence fabricant:
- SQJ457EP-T1_NE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -36A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQJ | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.9mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -36A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQJ | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS Compliant | ||
Width 4.9mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
The Vishay power MOSFET offers reliable performance for automotive applications, providing efficient switching and high thermal conductivity to ensure robust operation under various conditions.
AEC-Q101 qualified for automotive applications
TrenchFET technology enhances efficiency and reduces power loss
On-state resistance at -10V gate voltage is 0.0250 Ohm
Continuous drain current rated at -36A for high-performance applications
Liens connexes
- Vishay Single SQJ 1 Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8L SQJ457EP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin P SQJ160ELP-T1_GE3
- Vishay SQJ N channel-Channel Single MOSFETs 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -30 V Enhancement, 8-Pin PowerPAK SQJ951EP-T1_NE3
- Vishay SQD P-Channel Single MOSFETs -60 V Enhancement Mode, 3-Pin TO-252 SQD50P06-15L_NE3
- Vishay SQM P-Channel Single MOSFETs -100 V Enhancement Mode, 3-Pin TO-263 SQM100P10-19L_NE3
- Vishay SQD P-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-252 SQD50P04-13L_NE3