Vishay TrenchFET N-Channel Single MOSFETs, 352 A, 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3
- N° de stock RS:
- 847-933
- Référence fabricant:
- SQJQ580ER-T1_GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
5,06 €
(TVA exclue)
6,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 mai 2027
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 5,06 € |
| 10 - 99 | 3,31 € |
| 100 - 499 | 2,48 € |
| 500 - 999 | 2,08 € |
| 1000 + | 1,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 847-933
- Référence fabricant:
- SQJQ580ER-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 352A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00144Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS3 Compliant | |
| Length | 8mm | |
| Height | 1.6mm | |
| Width | 8mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 352A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK (8x8LR) | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00144Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS3 Compliant | ||
Length 8mm | ||
Height 1.6mm | ||
Width 8mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The Vishay automotive N-Channel power MOSFET delivers efficient high-performance switching for a variety of demanding applications, ensuring reliability under extreme conditions.
TrenchFET Gen V technology ensures enhanced efficiency and performance
AEC-Q101 qualified for automotive applications, assuring compliance with industry standards
Continuous drain current rated at 352 A under standard conditions
Thin profile of 1.9 mm maximises space efficiency in designs
100% tested for R and UIS, ensuring reliable operation
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