Vishay SISS N-Channel Single MOSFETs, 52 A, 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- N° de stock RS:
- 829-348
- Référence fabricant:
- SISS862ADN-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,72 €
(TVA exclue)
2,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,72 € |
| 10 - 99 | 1,08 € |
| 100 - 499 | 0,71 € |
| 500 - 999 | 0,56 € |
| 1000 + | 0,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-348
- Référence fabricant:
- SISS862ADN-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SISS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.3mm | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SISS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.3mm | ||
Height 1.07mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay Advanced N-Channel MOSFET designed primarily for high-efficiency switching applications. It delivers robust performance with low on-resistance characteristics.
Operating voltage up to 60V ensures versatility across applications
Very low on-state resistance optimises power efficiency
Guaranteed safe operating area enhances reliability during high-demand conditions
Thoroughly tested for R and UIS for assured performance
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