Vishay SiS N channel-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSD5300DN
- N° de stock RS:
- 735-152
- Référence fabricant:
- SiSD5300DN
- Fabricant:
- Vishay
Sous-total (1 unité)*
2,27 €
(TVA exclue)
2,75 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 + | 2,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 735-152
- Référence fabricant:
- SiSD5300DN
- Fabricant:
- Vishay
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Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00087Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 4mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00087Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 30V | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 4mm | ||
Height 1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
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