Vishay SISS N-Channel Single MOSFETs, 33.7 A, 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- N° de stock RS:
- 829-346
- Référence fabricant:
- SISS128LDN-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,63 €
(TVA exclue)
1,97 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,63 € |
| 10 - 99 | 1,03 € |
| 100 - 499 | 0,67 € |
| 500 - 999 | 0,53 € |
| 1000 + | 0,47 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-346
- Référence fabricant:
- SISS128LDN-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 33.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SISS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0156Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 33.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SISS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0156Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS Compliant | ||
Length 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay high-performance N-Channel MOSFET designed for efficient power management in a Compact package, ensuring reliable operation across various demanding applications.
TrenchFET Gen IV technology enables improved efficiency and thermal performance
Low RDS(on) values, optimising conduction losses during operation
Tested for high reliability with 100% R and UIS stressed units
Robust specifications with a 80V drain-source voltage rating and a maximum current of 33.7A
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