Vishay SIR N-Channel Single MOSFETs, 125 A, 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3
- N° de stock RS:
- 829-343
- Référence fabricant:
- SIR680ADP-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,56 €
(TVA exclue)
3,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,56 € |
| 10 - 99 | 1,64 € |
| 100 - 499 | 1,13 € |
| 500 - 999 | 0,96 € |
| 1000 + | 0,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-343
- Référence fabricant:
- SIR680ADP-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SIR | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00288Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Width | 5.15mm | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SIR | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00288Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Width 5.15mm | ||
Length 6.15mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay power MOSFET designed for efficient switching applications, featuring a Compact design that optimises space utilisation and thermal performance in circuit designs.
N-Channel 80V MOSFET with TrenchFET Gen IV technology for superior performance
Very low R-DS(on) rating reduces power loss during operation
Pulsed drain current capability of 300A supports demanding applications
Enhanced thermal characteristics ensure reliability at elevated temperatures
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