Vishay TrenchFET Dual N-Channel MOSFET, 125 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-UE3
- N° de stock RS:
- 736-656
- Référence fabricant:
- SIZF5300DT-T1-UE3
- Fabricant:
- Vishay
Sous-total (1 ruban de 1 unité)*
2,46 €
(TVA exclue)
2,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 + | 2,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-656
- Référence fabricant:
- SIZF5300DT-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.00351Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.00351Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay High performance Dual N-Channel MOSFET designed for efficient power management in various applications, delivering superior thermal performance and switching capabilities.
TrenchFET Gen V technology optimises efficiency and performance
Symmetric dual n-channel configuration enables versatile circuitry designs
High side and low side MOSFETs support 50% duty cycle applications
Extensive testing ensures reliable operation under rigorous conditions
Liens connexes
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- Vishay TrenchFET N-Channel Single MOSFETs 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3
- Vishay SIZF456LDT Dual N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3FS SIZF456LDT-T1-UE3
- Vishay SIZF5302DT Dual N-Channel MOSFET 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3