Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- N° de stock RS:
- 736-358
- Référence fabricant:
- SIZF5302DT-T1-UE3
- Fabricant:
- Vishay
Sous-total (1 ruban de 1 unité)*
1,19 €
(TVA exclue)
1,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 05 juillet 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 + | 1,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 736-358
- Référence fabricant:
- SIZF5302DT-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIZF5302DT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 48.1W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIZF5302DT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 48.1W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Width 3.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.
Utilises TrenchFET Gen V technology for enhanced efficiency
Features dual N-channel architecture that optimises heat dissipation
Capable of handling a maximum continuous drain current of 28.1A at 25°C
Liens connexes
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