Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- N° de stock RS:
- 252-0295
- Référence fabricant:
- SIZF5302DT-T1-RE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,49 €
(TVA exclue)
13,905 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 6 035 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,298 € | 11,49 € |
| 50 - 120 | 2,158 € | 10,79 € |
| 125 - 245 | 1,952 € | 9,76 € |
| 250 - 495 | 1,838 € | 9,19 € |
| 500 + | 1,724 € | 8,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0295
- Référence fabricant:
- SIZF5302DT-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Dual N-Channel 30 V (D-S) MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 48.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Dual N-Channel 30 V (D-S) MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 48.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
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