Vishay TrenchFET N-Channel Single MOSFETs, 34.6 A, 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3
- N° de stock RS:
- 847-936
- Référence fabricant:
- SIZF458LDT-T1-UE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,94 €
(TVA exclue)
2,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 1,94 € |
| 10 - 99 | 1,22 € |
| 100 - 499 | 0,83 € |
| 500 - 999 | 0,67 € |
| 1000 + | 0,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 847-936
- Référence fabricant:
- SIZF458LDT-T1-UE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 34.6A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.020Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Height | 1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 34.6A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.020Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS3 Compliant | ||
Height 1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- TW
The Vishay dual N-channel MOSFET designed for efficient power management, primarily serving in switching applications that require high reliability and performance under varying voltage conditions.
Operates with a maximum drain-source voltage of 70 V for robust performance
Optimised for 50% duty cycle configurations, enhancing efficiency in switching
Utilises flip chip technology, offering superior thermal design for better heat dissipation
100% tested for R and UIS to ensure reliability in critical applications
Liens connexes
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