ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL
- N° de stock RS:
- 687-454
- Référence fabricant:
- AG191FLD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
2,05 €
(TVA exclue)
2,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,025 € | 2,05 € |
| 20 - 48 | 0,905 € | 1,81 € |
| 50 - 198 | 0,81 € | 1,62 € |
| 200 - 998 | 0,655 € | 1,31 € |
| 1000 + | 0,64 € | 1,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-454
- Référence fabricant:
- AG191FLD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | AG191FLD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series AG191FLD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.
Low on resistance offers improved efficiency and reduces heat generation
Pb free plating conforms to RoHS standards for environmental safety
100% avalanche testing guarantees reliable performance under stress
AEC Q101 qualified, ensuring compliance with automotive industry standards
Supports a wide operating junction and storage temperature range from -55°C to 175°C
Flexible packaging specifications with tape and reel format for convenience in assembly
Integrated thermal resistance minimizes thermal concerns during operation
Supplied with precise gate charge characteristics for optimal switching performance
Liens connexes
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