ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL
- N° de stock RS:
- 687-454
- Référence fabricant:
- AG191FLD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
2,05 €
(TVA exclue)
2,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 98 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,025 € | 2,05 € |
| 20 - 48 | 0,905 € | 1,81 € |
| 50 - 198 | 0,81 € | 1,62 € |
| 200 - 998 | 0,655 € | 1,31 € |
| 1000 + | 0,64 € | 1,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-454
- Référence fabricant:
- AG191FLD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG191FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG191FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.
Low on resistance offers improved efficiency and reduces heat generation
Pb free plating conforms to RoHS standards for environmental safety
100% avalanche testing guarantees reliable performance under stress
AEC Q101 qualified, ensuring compliance with automotive industry standards
Supports a wide operating junction and storage temperature range from -55°C to 175°C
Flexible packaging specifications with tape and reel format for convenience in assembly
Integrated thermal resistance minimizes thermal concerns during operation
Supplied with precise gate charge characteristics for optimal switching performance
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