ROHM RH7G04BBJFRAT Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04BBJFRATCB

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Sous-total (1 ruban de 2 unités)*

1,86 €

(TVA exclue)

2,26 €

(TVA incluse)

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  • Plus 100 unité(s) expédiée(s) à partir du 23 février 2026
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Unité
Prix par unité
le ruban*
2 - 180,93 €1,86 €
20 - 480,82 €1,64 €
50 - 1980,74 €1,48 €
200 - 9980,595 €1,19 €
1000 +0,58 €1,16 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
687-447
Référence fabricant:
RH7G04BBJFRATCB
Fabricant:
ROHM
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Marque

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

-40V

Series

RH7G04BBJFRAT

Package Type

DFN3333T8LSAB

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

50nC

Maximum Power Dissipation Pd

75W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.1mm

Width

3.4 mm

Length

3.4mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Pays d'origine :
JP
The ROHM Power MOSFET is engineered for robust performance in demanding applications, offering exceptional efficiency and reliability. With a maximum Drain-Source voltage of -40V and continuous drain current capabilities reaching up to 40A, this component excels in power management. Its low on-state resistance of just 11.9mΩ enhances energy efficiency, making it an ideal choice for automotive and industrial systems. Designed to withstand temperatures from -55 to 175°C, this MOSFET ensures durability and stability under a wide range of conditions, while its AEC-Q101 qualification signals its suitability for automotive environments, contributing to enhanced device safety and efficacy.

AEC Q101 qualified for reliable automotive applications

100% avalanche tested for enhanced safety under extreme conditions

Low thermal resistance junction-case, promoting efficient heat dissipation

Wide operating temperature range ensures performance stability in harsh environments

Minimal on-state resistance optimises energy efficiency, reducing overall power loss

Capacitive characteristics tailored for fast switching applications, enhancing performance

Wettable flanks design facilitates reliable soldering and improved assembly quality

Suitability for various applications, including ADAS, lighting, and body control systems

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