ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL
- N° de stock RS:
- 687-383
- Référence fabricant:
- RD3G04BBJHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
1,52 €
(TVA exclue)
1,84 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 98 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,76 € | 1,52 € |
| 20 - 48 | 0,67 € | 1,34 € |
| 50 - 198 | 0,605 € | 1,21 € |
| 200 - 998 | 0,485 € | 0,97 € |
| 1000 + | 0,475 € | 0,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-383
- Référence fabricant:
- RD3G04BBJHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 (TL) | |
| Series | RD3G04BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 27.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 (TL) | ||
Series RD3G04BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 27.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.8mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET delivers exceptional performance, designed specifically for high-efficiency applications. This component effectively manages power with a maximum Drain-Source voltage of -40V and continuous current handling of ±40A, making it ideal for managing electrical loads in various systems. Its low on-resistance of 24.0mΩ ensures minimal energy loss, promoting efficiency, while robust thermal characteristics allow it to operate reliably up to 175°C junction temperature. This product is not only AEC-Q101 qualified but also 100% avalanche tested, ensuring dependable functionality in critical environments. It is the perfect choice for applications in automotive systems, lighting, and industrial controls.
Low on resistance design for reduced energy loss
Outstanding thermal resistance enhances reliability in high-temperature environments
AEC Q101 qualification ensures quality and performance in automotive applications
100% avalanche testing reinforces component reliability under extreme conditions
Embossed packaging facilitates easy handling and integration into systems
Compatible with a variety of applications, including ADAS and lighting
High pulsed drain current capability of ±80A supports demanding load scenarios
Minimal gate charge enhances switching speed, improving overall efficiency
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