ROHM RH7G04CBKFRA N-Channel Single MOSFETs, 40 A, 40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBKFRATCB
- N° de stock RS:
- 687-450
- Référence fabricant:
- RH7G04CBKFRATCB
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
1,76 €
(TVA exclue)
2,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 96 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,88 € | 1,76 € |
| 20 - 48 | 0,78 € | 1,56 € |
| 50 - 198 | 0,695 € | 1,39 € |
| 200 - 998 | 0,565 € | 1,13 € |
| 1000 + | 0,55 € | 1,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-450
- Référence fabricant:
- RH7G04CBKFRATCB
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RH7G04CBKFRA | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.0mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | RoHS | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RH7G04CBKFRA | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.0mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals RoHS | ||
Width 3.4mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The ROHM N channel Power MOSFET designed to operate efficiently in demanding applications. With a maximum drain-source voltage of 40V and a continuous drain current capability of up to 40A, this component excels in power switching and amplification tasks. Its low on-state resistance of 5.0 mΩ ensures minimal power loss during operation, making it ideal for both automotive and industrial applications. AEC-Q101 qualified, this device provides reliable performance with 100% avalanche testing, ensuring safety and durability in various operating conditions.
Designed for high efficiency with low on-state resistance, reducing heat generation
AEC Q101 qualified, ensuring reliability for automotive standards
100% avalanche tested for enhanced safety under transient conditions
Continuous drain current capability of up to 40A for demanding applications
Operating junction temperature range from -55 to +175°C for versatile usage
Suitable for applications in ADAS, lighting, and body electronics
Complies with strict quality control measures for dependable performance
Liens connexes
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