ROHM HT8MB5 Type N, Type P-Channel Single MOSFETs, 40 V Enhancement, 8-Pin HSMT-8 HT8MB5TB1

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Sous-total (1 ruban de 2 unités)*

1,21 €

(TVA exclue)

1,464 €

(TVA incluse)

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Temporairement en rupture de stock
  • 100 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité
Prix par unité
le ruban*
2 +0,605 €1,21 €

*Prix donné à titre indicatif

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N° de stock RS:
687-388
Référence fabricant:
HT8MB5TB1
Fabricant:
ROHM
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Marque

ROHM

Product Type

Single MOSFETs

Channel Type

Type N, Type P

Maximum Drain Source Voltage Vds

40V

Package Type

HSMT-8

Series

HT8MB5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

13W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.45mm

Width

3.4 mm

Height

0.8mm

Automotive Standard

No

The ROHM P channel power MOSFET designed for demanding applications such as motor drives and switching power supplies. This component features exceptionally low on-resistance, making it ideal for power management solutions where efficiency is paramount. The HT8MB5 is housed in a compact HSMT8 package, facilitating space-saving designs while maintaining high performance. With impressive maximum ratings and a robust design, this MOSFET provides reliable operation in varying environmental conditions, ensuring stability and longevity in its operations.

Low on resistance enhances efficiency and thermal management

Compact HSMT8 package allows for reduced footprint in designs

Rated for a drain-source voltage of 40V ensures versatility in applications

Power dissipation capability of 13W supports high-power applications

Pb free plating along with RoHS compliance demonstrates eco-friendliness

Halogen-free materials promote safety in electronic applications

100% tested for Rg and UIS, guaranteeing reliability and performance

Suitable for both switching and motor drive applications, increasing usability

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