ROHM AG087FGD3HRB Type N-Channel Single MOSFETs, 40 A, -40 V Enhancement, 3-Pin TO-252 (TL) AG087FGD3HRBTL
- N° de stock RS:
- 687-378
- Référence fabricant:
- AG087FGD3HRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
1,60 €
(TVA exclue)
1,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 0,80 € | 1,60 € |
| 20 - 48 | 0,70 € | 1,40 € |
| 50 - 198 | 0,63 € | 1,26 € |
| 200 - 998 | 0,51 € | 1,02 € |
| 1000 + | 0,50 € | 1,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-378
- Référence fabricant:
- AG087FGD3HRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | AG087FGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series AG087FGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for automotive and industrial applications. This versatile component operates at a maximal drain-source voltage of 40V, enabling efficient control in power management systems. Built with advanced technology, it boasts a low on-state resistance of 7.0 mΩ, optimising power efficiency and thermal performance. AEC-Q101 qualified, this MOSFET is reliable even in rigorous automotive environments, making it a sound choice for engineers seeking durable solutions. Its robust thermal resistance and avalanched tested design ensure exceptional reliability under varied operating conditions, cementing its status as a go-to option for high-current applications.
Continuous drain current rated at ±40A, providing reliable performance in demanding scenarios
Breakdown voltage of 40V ensuring robust protection against over-voltage conditions
Low gate threshold voltage of 1.0V to 2.5V facilitating smoother operation and control
Compliant with AEC Q101 , highlighting its suitability for automotive applications
Exceptional thermal resistance of 2.80℃/W, enhancing heat dissipation and lifespan
100% avalanche tested, providing peace of mind in high-stress environments
Features a DPAK package, optimising footprint while supporting effective thermal management
Suitable for high efficiency designs in automotive and other high-current applications
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