ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1

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Sous-total (1 ruban de 2 unités)*

1,55 €

(TVA exclue)

1,876 €

(TVA incluse)

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Prix par unité
le ruban*
2 +0,775 €1,55 €

*Prix donné à titre indicatif

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N° de stock RS:
687-371
Référence fabricant:
HT8KF6HTB1
Fabricant:
ROHM
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Marque

ROHM

Product Type

Single MOSFETs

Channel Type

Dual N

Maximum Drain Source Voltage Vds

150V

Package Type

HSMT-8

Series

HT8KF6H

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

214mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.4nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

14W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.45mm

Width

3.4 mm

Height

0.8mm

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
JP
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.

Low on resistance for improved efficiency

High power capacity in a compact HSMT8 mould package

Complies with RoHS regulations with Pb free plating

Halogen-free design to support eco-friendly initiatives

Versatile application in motor drives and power management systems

High maximum junction temperature rating of 150°C

Impressive maximum power dissipation of 14W

Reliable avalanche characteristics with a maximum energy of 0.24mJ

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