ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- N° de stock RS:
- 687-371
- Référence fabricant:
- HT8KF6HTB1
- Fabricant:
- ROHM
Sous-total (1 ruban de 2 unités)*
1,55 €
(TVA exclue)
1,876 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 + | 0,775 € | 1,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-371
- Référence fabricant:
- HT8KF6HTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSMT-8 | |
| Series | HT8KF6H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 14W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSMT-8 | ||
Series HT8KF6H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 14W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Height 0.8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
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