ROHM HT8MC5 Type P, Type N-Channel Single MOSFETs, 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1

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Sous-total (1 ruban de 2 unités)*

1,21 €

(TVA exclue)

1,464 €

(TVA incluse)

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2 +0,605 €1,21 €

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N° de stock RS:
687-389
Référence fabricant:
HT8MC5TB1
Fabricant:
ROHM
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Marque

ROHM

Product Type

Single MOSFETs

Channel Type

Type P, Type N

Maximum Drain Source Voltage Vds

60V

Package Type

HSMT-8

Series

HT8MC5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

97mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

13W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.8mm

Length

3.45mm

Width

3.4 mm

Automotive Standard

No

The ROHM N channel and P channel power MOSFET designed for efficient motor drive applications. Built within an advanced HSMT8 package, this device boasts low on-state resistance, enabling enhanced power management while minimising heat generation. Its robust capabilities make it suitable for various applications demanding reliability and efficiency, particularly in environments where space is at a premium. With a Pb-free and RoHS-compliant design, it aligns with modern standards for environmental safety while delivering impressive specifications, ensuring versatile deployment across numerous electronic sectors.

Low on resistance enhances power efficiency and reduces energy loss

High Power small mold package (HSMT8) is ideal for space-constrained applications

Pb free plating and RoHS compliance ensure environmental friendliness

Halogen-free construction provides additional safety and compliance

Fully Rg and UIS tested for improved reliability under dynamic conditions

Embossed packaging optimises handling and insertion during manufacturing

Maximum junction temperature of 150°C allows reliable performance in high-heat environments.

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