ROHM HP8KF7H Dual N-Channel Single MOSFETs, 18.5 A, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1
- N° de stock RS:
- 687-364
- Référence fabricant:
- HP8KF7HTB1
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
3,05 €
(TVA exclue)
3,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 94 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,525 € | 3,05 € |
| 20 - 48 | 1,345 € | 2,69 € |
| 50 - 198 | 1,205 € | 2,41 € |
| 200 - 998 | 0,97 € | 1,94 € |
| 1000 + | 0,95 € | 1,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-364
- Référence fabricant:
- HP8KF7HTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 18.5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HP8KF7H | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 18.5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HP8KF7H | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Length 6.1mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET designed to efficiently manage power in various electronic applications. With a low on-resistance of 62mΩ and a compact HSOP8 package, this MOSFET ensures superior thermal management and high reliability. Its specifications support a continuous drain current of ±18.5A, making it ideal for demanding tasks such as motor drives. Offering excellent energy efficiency and compliance with RoHS and halogen-free standards, it seamlessly integrates into advanced electronic designs while ensuring environmental responsibility.
Optimised for low on resistance, enhancing overall efficiency
Compact HSOP8 package allows for space-saving designs
Ideal for a variety of applications, including motor drives
Meets RoHS and halogen-free requirements for environmental safety
High continuous and pulsed drain current ratings ensure reliability under load
Excellent thermal management with low thermal resistance ratings
Designed for high-performance switching applications with minimal delay
Stable operation across a wide temperature range from -55 to +150°C
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