Name: ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB
Brand: ROHM
SKU: 687-380
Price: 2.15 EUR
Availability: BackOrder

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Sélectionner tout	Attribut	Valeur
	Marque	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	100V
	Series	RQ3P120BKFRA
	Package Type	HSMT-8AG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	300 mm
	Standards/Approvals	RoHS
	Height	0.9mm
	Length	3.30mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 100V
	Series RQ3P120BKFRA
	Package Type HSMT-8AG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 300 mm
	Standards/Approvals RoHS
	Height 0.9mm
	Length 3.30mm
	Automotive Standard AEC-Q101

The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%

High mounting reliability achieved through innovative terminal and plating treatments

AEC Q101 qualification ensures reliability in automotive applications

Designed to handle a maximum power dissipation of 40W for effective thermal management

Low on-state resistance of 58mΩ enhances efficiency and performance

Robust gate-source voltage tolerance of ±20V expands integration possibilities

Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation

Highly reliable operation across a temperature range of -55 to +150°C

Unité	Prix par unité	le ruban*
2 - 18	1,775 €	3,55 €
20 - 48	1,56 €	3,12 €
50 - 198	1,41 €	2,82 €
200 - 998	1,13 €	2,26 €
1000 +	1,11 €	2,22 €

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

Frais de livraison offerts pour toute commande de plus de 75,00 €

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