ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB
- N° de stock RS:
- 687-380
- Référence fabricant:
- RQ3P120BKFRATCB
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 ruban de 2 unités)*
3,55 €
(TVA exclue)
4,296 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,775 € | 3,55 € |
| 20 - 48 | 1,56 € | 3,12 € |
| 50 - 198 | 1,41 € | 2,82 € |
| 200 - 998 | 1,13 € | 2,26 € |
| 1000 + | 1,11 € | 2,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-380
- Référence fabricant:
- RQ3P120BKFRATCB
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8AG | |
| Series | RQ3P120BKFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 300 mm | |
| Length | 3.30mm | |
| Height | 0.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8AG | ||
Series RQ3P120BKFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 300 mm | ||
Length 3.30mm | ||
Height 0.9mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.
Small high-powered package optimises space on PCBs by 64%
High mounting reliability achieved through innovative terminal and plating treatments
AEC Q101 qualification ensures reliability in automotive applications
Designed to handle a maximum power dissipation of 40W for effective thermal management
Low on-state resistance of 58mΩ enhances efficiency and performance
Robust gate-source voltage tolerance of ±20V expands integration possibilities
Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation
Highly reliable operation across a temperature range of -55 to +150°C
Liens connexes
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