ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 9 A, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- N° de stock RS:
- 687-385
- Référence fabricant:
- HT8MD5HTB1
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
3,50 €
(TVA exclue)
4,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 200 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 18 | 1,75 € | 3,50 € |
| 20 - 48 | 1,55 € | 3,10 € |
| 50 - 198 | 1,39 € | 2,78 € |
| 200 - 998 | 1,12 € | 2,24 € |
| 1000 + | 1,085 € | 2,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-385
- Référence fabricant:
- HT8MD5HTB1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSMT-8 | |
| Series | HT8MD5HT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.0W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Width | 3.4mm | |
| Standards/Approvals | RoHS | |
| Length | 3.45mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSMT-8 | ||
Series HT8MD5HT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.0W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Width 3.4mm | ||
Standards/Approvals RoHS | ||
Length 3.45mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.
Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C
Liens connexes
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