STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- N° de stock RS:
- 671-934
- Référence fabricant:
- SCT018HU65G3AG
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 671-934
- Référence fabricant:
- SCT018HU65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Series | STPOWER Gen3 SiC MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 60 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | HU3PAK | |
| Automotive Standard | AEC-Q101 | |
| Height | 5.15 mm | |
| Length | 35.9 mm | |
| Maximum Drain Source Resistance (Rds) | 21.5 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 22 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 388 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 82.5 nC | |
| Width | 15.75 mm | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Series STPOWER Gen3 SiC MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 60 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type HU3PAK | ||
Automotive Standard AEC-Q101 | ||
Height 5.15 mm | ||
Length 35.9 mm | ||
Maximum Drain Source Resistance (Rds) 21.5 mΩ | ||
Maximum Gate Source Voltage (Vgs) 22 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 388 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 82.5 nC | ||
Width 15.75 mm | ||
- Pays d'origine :
- IT
Liens connexes
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- STMicroelectronics STPOWER Gen3 SiC N-Channel 40 V Enhancement, 4-Pin Hip-247-4 STL140N4LF8
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG
- STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- STMicroelectronics Sct N-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- STMicroelectronics SiC MOSFET N-Channel 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG
- STMicroelectronics SCT0 Power MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG