STMicroelectronics SCT0 Power MOSFET, 60 A, 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- N° de stock RS:
- 330-233
- Référence fabricant:
- SCT027HU65G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
17,02 €
(TVA exclue)
20,59 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 avril 2027
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 17,02 € |
| 10 - 99 | 15,31 € |
| 100 + | 14,11 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-233
- Référence fabricant:
- SCT027HU65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | SCT0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Typical Gate Charge Qg @ Vgs | 60.4nC | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series SCT0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Typical Gate Charge Qg @ Vgs 60.4nC | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.5mm | ||
Length 18.58mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
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