STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- N° de stock RS:
- 719-663
- Référence fabricant:
- STPSC30G065L2Y
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
8,87 €
(TVA exclue)
10,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 + | 8,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 719-663
- Référence fabricant:
- STPSC30G065L2Y
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 7 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.3V | |
| Peak Reverse Current Ir | 1200μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 11.9mm | |
| Height | 3.6mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 7 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.3V | ||
Peak Reverse Current Ir 1200μA | ||
Maximum Operating Temperature 175°C | ||
Length 11.9mm | ||
Height 3.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge current capability
ECOPACK2 compliant component
SMD with TOP side cooling package
Liens connexes
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