STMicroelectronics SiC MOSFET N-Channel, 55 A, 650 V Enhancement, 3-Pin Hip-247 SCT018W65G3AG
- N° de stock RS:
- 671-935
- Référence fabricant:
- SCT018W65G3AG
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 671-935
- Référence fabricant:
- SCT018W65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Législations et de normes
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Series | SiC MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 55 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | Hip-247 | |
| Automotive Standard | AEC-Q101 | |
| Height | 5.15 mm | |
| Length | 35.9 mm | |
| Maximum Drain Source Resistance (Rds) | 20 mΩ | |
| Maximum Operating Temperature | 200 °C | |
| Maximum Power Dissipation (Pd) | 398 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 76 nC | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Series SiC MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 55 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type Hip-247 | ||
Automotive Standard AEC-Q101 | ||
Height 5.15 mm | ||
Length 35.9 mm | ||
Maximum Drain Source Resistance (Rds) 20 mΩ | ||
Maximum Operating Temperature 200 °C | ||
Maximum Power Dissipation (Pd) 398 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 76 nC | ||
- Pays d'origine :
- CN
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