Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1

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N° de stock RS:
284-798
Référence fabricant:
ISZ330N12LM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 6 Power Transistor

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

43W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is designed to meet the rigorous demands of modern electronic applications, boasting optimum efficiency and reliability. The Advanced OptiMOS 6 technology empowers this component to deliver exceptional performance across various operating conditions, ensuring it remains a TOP choice for engineers and developers. Its robust design reflects a careful balance between high switching speeds and low on resistance, making it an excellent candidate for high frequency applications such as synchronous rectification and power management. The transistor is particularly well suited for industrial environments, with a thermal rating that supports both extensive operational ranges and heavy duty cycling.

Optimised for high frequency switching

Pb free lead plating for compliance

Halogen free for environmental sustainability

MSL 1 classified for reliable assembly

Superior thermal efficiency with low on resistance

Excellent gate charge for Faster switching

Fully qualified per JEDEC standards

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